RF JFET Transistors GaN HEMT 50V 1.2-1.4GHz 600W

Specifications

Product Attribute	Attribute Value	Search Similar
Manufacturer:	Cree, Inc.
Product Category:	RF JFET Transistors
RoHS:	Details
Transistor Type:	HEMT
Technology:	GaN-on-SiC
Operating Frequency:	1.2 GHz to 1.4 GHz
Gain:	18 dB
Transistor Polarity:	N-Channel
Vds – Drain-Source Breakdown Voltage:	150 V
Vgs – Gate-Source Breakdown Voltage:	– 10 V to 2 V
Id – Continuous Drain Current:	10 A
Output Power:	600 W
Maximum Drain Gate Voltage:	–
Mounting Style:	Screw Mount
Package/Case:	H-36248-2
Packaging:	Cut Tape
Packaging:	MouseReel
Packaging:	Reel
Brand:	Wolfspeed / Cree
Product Type:	RF JFET Transistors
Factory Pack Quantity:	50
Subcategory:	Transistors
Vgs th – Gate-Source Threshold Voltage:	– 3 V

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